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jmnic product specification silicon npn power transistors 2SC1846 description ? ? with to-126 package ? complement to type 2sa885 ? low collector saturation applications ? for medium output power amplification pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximun ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 45 v v ceo collector-emitter voltage open base 35 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 1 a i cm collector current-peak 1.5 a 1.2* 1 p c collector power dissipation t c =25 ?? 5* 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? note) *1: without heat sink *2: with a 100 ? 100 ? 2 mm a1 heat sink
jmnic product specification 2 silicon npn power transistors 2SC1846 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =2ma;i b =0 35 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 45 v v cesat collector-emitter saturation voltage i c =0.5a ;i b =50ma 0.5 v i cbo collector cut-off current v cb =20v; i e =0 0.1 | a i ceo collector cut-off current v ce =20v; i b =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe-1 dc current gain i c =0.5a ; v ce =10v 85 340 h fe-2 dc current gain i c =1a ; v ce =5v 50 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 20 pf f t transition frequency i c =50ma ; v cb =10v,f=200mhz 200 mhz ? h fe-1 classifications q r s 85-170 120-240 170-340
jmnic product specification 3 silicon npn power transistors 2SC1846 package outline fig.2 outline dimensions
jmnic product specification 4 silicon npn power transistors 2SC1846

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